![ZEISS Crossbeam 350 FIB-SEM microscope used for flexible materials analysis and sample preparation workflows.]({"max":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-350-1.jpg/_jcr_content/renditions/original./crossbeam-350-1.jpg"})
Crossbeam 350的特色
Crossbeam 350专为日常工作流量身定制，涵盖低真空操作、标准FIB处理以及TEM薄片制备。引导式与半自动化工作流可减少人工操作，同时提高不同用户和实验室之间的结果可重复性。选配的交换舱导航摄像头（NavCam）成像功能可加速对大尺寸样品和晶圆的导航及感兴趣区域定位，从而实现从采集样品到获取结果的更快转换。此外，扩展的气体注入功能支持多达五个通道，提高了沉积和刻蚀工艺的灵活性，使工作流能够随应用复杂性的增长而不断演进。
![蔡司Crossbeam 350 FIB-SEM显微镜，专为多用户研究实验室中的灵活成像与样品制备而设计。]({"xsmall":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-350-stage.jpg/_jcr_content/renditions/original.image_file.100.33.0,220,1920,860.file/crossbeam-350-stage.jpg","small":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-350-stage.jpg/_jcr_content/renditions/original.image_file.360.120.0,220,1920,860.file/crossbeam-350-stage.jpg","medium":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-350-stage.jpg/_jcr_content/renditions/original.image_file.768.256.0,220,1920,860.file/crossbeam-350-stage.jpg","large":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-350-stage.jpg/_jcr_content/renditions/original.image_file.1024.341.0,220,1920,860.file/crossbeam-350-stage.jpg","xlarge":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-350-stage.jpg/_jcr_content/renditions/original.image_file.1280.427.0,220,1920,860.file/crossbeam-350-stage.jpg","xxlarge":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-350-stage.jpg/_jcr_content/renditions/original.image_file.1440.480.0,220,1920,860.file/crossbeam-350-stage.jpg","max":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-350-stage.jpg/_jcr_content/renditions/original.image_file.1920.640.0,220,1920,860.file/crossbeam-350-stage.jpg"})
蔡司Crossbeam 350 FIB-SEM
适用于多用户实验室应用的灵活FIB-SEM蔡司Crossbeam 350将蔡司Ion-sculptor FIB切割技术与蔡司Gemini 1成像和可变压力技术相结合，能够支持广泛的应用，包括不导电、磁性以及不兼容高真空的样品。此产品专为共享平台而设计，可为科研和工业工作流提供可靠的高分辨率成像分析、样品制备以及灵活的配置方案。
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![Illustration of focused ion beam milling used to prepare thin TEM lamellae for analysis with the ZEISS Crossbeam 350 FIB-SEM.]({"max":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-350-2.jpg/_jcr_content/renditions/original./crossbeam-350-2.jpg"})
关键规格参数
- 电子光学器件和离子束技术：Gemini 1 FE-SEM + Ion-sculptor FIB
- 可变压力范围：支持不导电及不兼容高真空的材料
- 分辨率：可灵敏感知表面，在低电压SEM下具有高分辨率，适用于日常纳米级分析
- 可从容处理不导电、磁性、易脱气及不兼容高真空的样品，以及金属、聚合物、陶瓷、生物材料、细胞、组织和半导体样品。
![SEM image of a TEM lamella trench prepared by focused ion beam milling for lamella thinning and sample preparation.]({"max":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-350-3.jpg/_jcr_content/renditions/original./crossbeam-350-3.jpg"})
TEM薄片制备与成像工作流融为一体
蔡司Crossbeam 350可简化FIB-SEM的样品制备、失效分析和探索性三维断层扫描。研究人员可通过实时SEM监测功能进行分块、减薄和检查，随后进行低能量FIB抛光，从而大幅减少离子损伤。引导式ZEN工作流支持手动和半自动TEM薄片制备、多地点间批量执行以及基于参数的可重复性。
![SEM image of a milled sample cross-section displayed in ZEISS software for FIB-SEM analysis and microscopy workflow automation.]({"max":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-350-4.jpg/_jcr_content/renditions/original./crossbeam-350-4.jpg"})
先进的软件工作流有利于自动化、分析和可扩展的显微镜数据处理
蔡司提供集成的软件生态系统，以此加速从采集数据到获得结果的显微镜工作流。面向电子显微镜的ZEN core可灵活协调自动化参数、批量执行以及集成SEM/FIB成像。作为对核心控制功能的有力补充，蔡司arivis套件在可扩展的人工智能驱动图像分析领域扩展了多项功能。
arivis Pro支持灵活的多维可视化与图像分割流程；arivis Hub加速并批量处理海量数据；arivis Cloud提供基于云端的人工智能模型训练，无需编码即可自动进行并扩展高级分析。这些工具结合在一起，共同提高了微纳加工、大面积成像和关联工作流的效率，并为用户带来了可重复的优质结果。
相关应用
![利用聚焦离子束切割制备的纳米流体通道SEM显微图像，用于微流控和纳流控研究。]({"xsmall":"https://www.zeiss.com.cn/content/dam/rms/reference-master/applications/materials/meander-channels.jpg/_jcr_content/renditions/original.image_file.100.75.117,0,1804,1265.file/meander-channels.jpg","small":"https://www.zeiss.com.cn/content/dam/rms/reference-master/applications/materials/meander-channels.jpg/_jcr_content/renditions/original.image_file.360.270.117,0,1804,1265.file/meander-channels.jpg","medium":"https://www.zeiss.com.cn/content/dam/rms/reference-master/applications/materials/meander-channels.jpg/_jcr_content/renditions/original.image_file.768.576.117,0,1804,1265.file/meander-channels.jpg","large":"https://www.zeiss.com.cn/content/dam/rms/reference-master/applications/materials/meander-channels.jpg/_jcr_content/renditions/original.image_file.1024.768.117,0,1804,1265.file/meander-channels.jpg","xlarge":"https://www.zeiss.com.cn/content/dam/rms/reference-master/applications/materials/meander-channels.jpg/_jcr_content/renditions/original.image_file.1280.960.117,0,1804,1265.file/meander-channels.jpg","xxlarge":"https://www.zeiss.com.cn/content/dam/rms/reference-master/applications/materials/meander-channels.jpg/_jcr_content/renditions/original.image_file.1440.1080.117,0,1804,1265.file/meander-channels.jpg","max":"https://www.zeiss.com.cn/content/dam/rms/reference-master/applications/materials/meander-channels.jpg/_jcr_content/renditions/original.image_file.1687.1265.117,0,1804,1265.file/meander-channels.jpg"})
材料研究
- 利用低电压成像实现的表面灵敏性进行纳米结构分析
- 执行特定位置的截面和三维断层扫描任务
- 通过低能量切割制备TEM样品
- 使工作流适应陶瓷、聚合物、金属和复合材料等一系列样品
- 利用可变压力成像功能表征接触层、互连和高级节点
- 利用可变压力技术，无需喷镀即可减少样品荷电
![使用蔡司Crossbeam 350 FIB-SEM在低电压下拍摄的解理SiC MOSFET器件的SEM图像，显示了N+扩散区与P型基区之间的掺杂对比度。]({"xsmall":"https://www.zeiss.com.cn/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg/_jcr_content/renditions/original.image_file.100.75.file/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg","small":"https://www.zeiss.com.cn/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg/_jcr_content/renditions/original.image_file.360.270.file/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg","medium":"https://www.zeiss.com.cn/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg/_jcr_content/renditions/original.image_file.768.576.file/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg","large":"https://www.zeiss.com.cn/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg/_jcr_content/renditions/original.image_file.1024.768.file/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg","xlarge":"https://www.zeiss.com.cn/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg/_jcr_content/renditions/original.image_file.1280.960.file/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg","xxlarge":"https://www.zeiss.com.cn/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg/_jcr_content/renditions/original.image_file.1440.1080.file/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg","max":"https://www.zeiss.com.cn/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg/_jcr_content/renditions/original./silicon-carbide-mosfet-dopant-profiling-fib-sem.jpg"})
电子元件和半导体
- 分析大型器件：MEMS、模拟器件、成熟节点和功率器件的理想之选
- 跨多个器件制备厚度一致且损伤微小的TEM薄片
![秀丽隐杆线虫的三维FIB-SEM重构图像，以纳米级分辨率显示了其内部解剖结构。]({"xsmall":"https://www.zeiss.com.cn/content/dam/rms/reference-master/applications/life-sciences/ultrastructural-imaging/nanotomography_c-elegans_crossbeam-auriga.jpg/_jcr_content/renditions/original.image_file.100.75.452,0,1891,1082.file/nanotomography_c-elegans_crossbeam-auriga.jpg","small":"https://www.zeiss.com.cn/content/dam/rms/reference-master/applications/life-sciences/ultrastructural-imaging/nanotomography_c-elegans_crossbeam-auriga.jpg/_jcr_content/renditions/original.image_file.360.270.452,0,1891,1082.file/nanotomography_c-elegans_crossbeam-auriga.jpg","medium":"https://www.zeiss.com.cn/content/dam/rms/reference-master/applications/life-sciences/ultrastructural-imaging/nanotomography_c-elegans_crossbeam-auriga.jpg/_jcr_content/renditions/original.image_file.768.576.452,0,1891,1082.file/nanotomography_c-elegans_crossbeam-auriga.jpg","large":"https://www.zeiss.com.cn/content/dam/rms/reference-master/applications/life-sciences/ultrastructural-imaging/nanotomography_c-elegans_crossbeam-auriga.jpg/_jcr_content/renditions/original.image_file.1024.768.452,0,1891,1082.file/nanotomography_c-elegans_crossbeam-auriga.jpg","xlarge":"https://www.zeiss.com.cn/content/dam/rms/reference-master/applications/life-sciences/ultrastructural-imaging/nanotomography_c-elegans_crossbeam-auriga.jpg/_jcr_content/renditions/original.image_file.1280.960.452,0,1891,1082.file/nanotomography_c-elegans_crossbeam-auriga.jpg","xxlarge":"https://www.zeiss.com.cn/content/dam/rms/reference-master/applications/life-sciences/ultrastructural-imaging/nanotomography_c-elegans_crossbeam-auriga.jpg/_jcr_content/renditions/original.image_file.1439.1079.452,0,1891,1082.file/nanotomography_c-elegans_crossbeam-auriga.jpg","max":"https://www.zeiss.com.cn/content/dam/rms/reference-master/applications/life-sciences/ultrastructural-imaging/nanotomography_c-elegans_crossbeam-auriga.jpg/_jcr_content/renditions/original.image_file.1439.1079.452,0,1891,1082.file/nanotomography_c-elegans_crossbeam-auriga.jpg"})
生命科学与生物研究
- 利用低电压且对表面灵敏的SEM成像功能揭示显微结构
- 通过准确的FIB切割技术获取细胞或组织的目标区域
- 执行三维断层扫描以重构细胞器和生物界面
- 通过显著减少损伤的低能量减薄功能制备高质量TEM薄片
客户推荐
在这些细胞中发生着多种不同的物理相互作用，借助三维电子显微镜，我们可以对这些情况一览无遗。这使我们能够以综合的视角看待肌肉细胞结构。
常见问题解答
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蔡司Crossbeam 350特别适用于需要可靠FIB-SEM性能来处理各类样品的实验室，同时可灵活应对探索性研究、日常薄片制备和共享平台使用。其采用Gemini 1电子光学系统、Ion-sculptor FIB切割和可变压力SEM技术，可处理包括不导电、磁性及不兼容高真空的样品在内的广泛材料。引导式工作流和灵活配置使其成为了共享平台和多用户实验室的理想之选。
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Crossbeam 350使用面向电子显微镜的ZEN core提供引导式工作流和基于参数的操作，有助于减少用户间的操作差异并简化共享环境下的训练。
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可以。尽管Crossbeam 350并未面向要求非常严苛的低损伤或超高通量应用而进行优化，但其仍可为对离子束敏感的样品执行受控成像和切割工作流。
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当您需要将灵活可靠的FIB-SEM系统用于各种应用、共享平台使用或探索性研究时，应选择Crossbeam 350或Crossbeam 750而非Crossbeam 550或750，后两者适用于对通量和性能要求更高的场景。
![蔡司Crossbeam 550产品图片]({"xsmall":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-550.jpg/_jcr_content/renditions/original.image_file.100.100.189,81,1724,1616.file/crossbeam-550.jpg","small":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-550.jpg/_jcr_content/renditions/original.image_file.360.360.189,81,1724,1616.file/crossbeam-550.jpg","medium":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-550.jpg/_jcr_content/renditions/original.image_file.768.768.189,81,1724,1616.file/crossbeam-550.jpg","large":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-550.jpg/_jcr_content/renditions/original.image_file.1024.1024.189,81,1724,1616.file/crossbeam-550.jpg","xlarge":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-550.jpg/_jcr_content/renditions/original.image_file.1280.1280.189,81,1724,1616.file/crossbeam-550.jpg","xxlarge":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-550.jpg/_jcr_content/renditions/original.image_file.1440.1440.189,81,1724,1616.file/crossbeam-550.jpg","max":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-550.jpg/_jcr_content/renditions/original.image_file.1535.1535.189,81,1724,1616.file/crossbeam-550.jpg"} "蔡司Crossbeam 550 FIB-SEM")
![蔡司Crossbeam 750产品图片]({"xsmall":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-750_front-without-detector.jpg/_jcr_content/renditions/original.image_file.100.100.240,0,1680,1440.file/crossbeam-750_front-without-detector.jpg","small":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-750_front-without-detector.jpg/_jcr_content/renditions/original.image_file.360.360.240,0,1680,1440.file/crossbeam-750_front-without-detector.jpg","medium":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-750_front-without-detector.jpg/_jcr_content/renditions/original.image_file.768.768.240,0,1680,1440.file/crossbeam-750_front-without-detector.jpg","large":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-750_front-without-detector.jpg/_jcr_content/renditions/original.image_file.1024.1024.240,0,1680,1440.file/crossbeam-750_front-without-detector.jpg","xlarge":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-750_front-without-detector.jpg/_jcr_content/renditions/original.image_file.1280.1280.240,0,1680,1440.file/crossbeam-750_front-without-detector.jpg","xxlarge":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-750_front-without-detector.jpg/_jcr_content/renditions/original.image_file.1440.1440.240,0,1680,1440.file/crossbeam-750_front-without-detector.jpg","max":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-750_front-without-detector.jpg/_jcr_content/renditions/original.image_file.1440.1440.240,0,1680,1440.file/crossbeam-750_front-without-detector.jpg"} "蔡司Crossbeam 750 FIB-SEM")
![蔡司Crossbeam 550 Samplefab]({"xsmall":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-samplefab_front-view.jpg/_jcr_content/renditions/original.image_file.100.100.240,0,1680,1440.file/crossbeam-samplefab_front-view.jpg","small":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-samplefab_front-view.jpg/_jcr_content/renditions/original.image_file.360.360.240,0,1680,1440.file/crossbeam-samplefab_front-view.jpg","medium":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-samplefab_front-view.jpg/_jcr_content/renditions/original.image_file.768.768.240,0,1680,1440.file/crossbeam-samplefab_front-view.jpg","large":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-samplefab_front-view.jpg/_jcr_content/renditions/original.image_file.1024.1024.240,0,1680,1440.file/crossbeam-samplefab_front-view.jpg","xlarge":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-samplefab_front-view.jpg/_jcr_content/renditions/original.image_file.1280.1280.240,0,1680,1440.file/crossbeam-samplefab_front-view.jpg","xxlarge":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-samplefab_front-view.jpg/_jcr_content/renditions/original.image_file.1440.1440.240,0,1680,1440.file/crossbeam-samplefab_front-view.jpg","max":"https://www.zeiss.com.cn/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-samplefab_front-view.jpg/_jcr_content/renditions/original.image_file.1440.1440.240,0,1680,1440.file/crossbeam-samplefab_front-view.jpg"} "蔡司Crossbeam 550 Samplefab")